PART |
Description |
Maker |
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc. EPCOS AG
|
CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36/1M × 18)流水线双氰胺同步静态存储器 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)与总线延迟建筑18 MB的(12k × 36/1M × 18)管道式静态存储器(总线延迟结构)流水线的SRAM
|
Cypress Semiconductor Corp.
|
AS7C33512NTD18A AS7C33512NTD18A.V.2.1 AS7C33512NTD |
3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4 ns, PQFP100 3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD 512K X 18 ZBT SRAM, 4.5 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C1387B-133BGC CY7C1387B-133AC CY7C1387B-133BZC |
512K x 36/1M x 18 Pipelined DCD SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined DCD SRAM 512K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1354A CY7C1354A-133BGC CY7C1354A-133BGI CY7C13 |
256K x 36/512K x 18 Pipelined SRAM with NoBL(TM) Architecture 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC Motorola, Inc
|
CY7C1370D-250BZI CY7C1372D-167BGC CY7C1372D-167BZC |
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3.4 ns, PQFP100 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165 18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IS61LPD102418A-200TQI IS61LPD102418A-200B3 IS61LPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 3.1 ns, PQFP100 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|